| PART |
Description |
Maker |
| CY7C0833AV CY7C0833AV-100BBC CY7C0833AV-100BBI CY7 |
FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor
|
| IS61LF25618A-7.5TQLI |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
Integrated Silicon Solu...
|
| MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100
Replaced by PTH12000W :
|
MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| CY7C0832AV-133AXC CY7C0832AV-133AXI |
FLEx18(TM) 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.0 to 3.6 V; Speed: 133 MHz
|
CYPRESS SEMICONDUCTOR CORP
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| AS7C33128PFS32B AS7C33128PFS32A |
(AS7C33128PFS32A / AS7C33128PFS36A) 3.3V 128K X 32/36 pipeline burst synchronous SRAM
(AS7C33128PFS32B / AS7C33128PFS36B) 3.3V 128K X 32/36 pipeline burst synchronous SRAM
|
Alliance Semiconductor Corporation
|
| IS61VPS12836A IS64LPS25618A |
128K x 32 / 128K x 36- 256K x 18 4Mb SYNCHRONOUS PIPELINED / SINGLE CYCLE DESELECT STATIC RAM
128K x 32/ 128K x 36/ 256K x 18 4 Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution
|
| CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
|
Sony, Corp.
|
| MCM63D736 |
128K x 36 Bit Synchronous
Dual I/O, Dual Address SRAM(128K x 36 Bit同步双I/O双地址静态存储器)
|
Motorola, Inc.
|
| IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量，通过输出脉冲计数器，单周期取
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
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